Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves

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dc.contributor.authorCaruso, Enrico
dc.contributor.authorLin, Jun
dc.contributor.authorBurke, K. F.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorEsseni, David
dc.contributor.authorGity, Farzan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorHurley, Paul K.
dc.contributor.authorSelmi, Luca
dc.date.accessioned2018-11-30T12:23:22Z
dc.date.available2018-11-30T12:23:22Z
dc.date.issued2018-06
dc.description.abstractIn this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out.en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCaruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D.; Gity, F., Monaghan, S., Palestri, P.; Hurley, P. K.; Selmi, L. (2018) ‘Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves’, 20th Workshop on Dielectrics in Microelectronics - WODIM 2018, Berlin, Germany, 10-14 June.en
dc.identifier.urihttps://hdl.handle.net/10468/7160
dc.language.isoenen
dc.rights© 2018, the Authors. All rights reserved.en
dc.subjectTCADen
dc.subjectDepletion capacitanceen
dc.subjectQuantization modelen
dc.titlePhysics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curvesen
dc.typeConference itemen
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