Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves

Caruso, Enrico; Lin, Jun; Burke, K. F.; Cherkaoui, Karim; Esseni, David; Gity, Farzan; Monaghan, Scott; Palestri, Pierpaolo; Hurley, Paul K.; Selmi, Luca

Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves

Files

wodim20182.pdf(712.9 KB)

Submitted Version

Date

2018-06

Authors

Caruso, Enrico

Lin, Jun

Burke, K. F.

Cherkaoui, Karim

Esseni, David

Gity, Farzan

Monaghan, Scott

Palestri, Pierpaolo

Hurley, Paul K.

Selmi, Luca

Abstract

In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out.

Keywords

TCAD , Depletion capacitance , Quantization model

Citation

Caruso, E., Lin, J., Burke, K. F.; Cherkaoui, K., Esseni, D.; Gity, F., Monaghan, S., Palestri, P.; Hurley, P. K.; Selmi, L. (2018) ‘Physics-based TCAD analysis of border and interface traps in Al2O3/InGaAs stacks using multifrequency CV-curves’, 20th Workshop on Dielectrics in Microelectronics - WODIM 2018, Berlin, Germany, 10-14 June.