Low threshold lasing in InP/GaInP quantum dot microdisks
Lebedev, D. V.; Vlasov, A. S.; Kulagina, M. M.; Troshkov, S. I.; Guseva, Y. A.; Pelucchi, Emanuele; Gocalińska, Agnieszka M.; Juska, Gediminas; Romanova, A. Y.; Buriak, P. A.; Smirnov, V. I.; Shelaev, A. V.; Bykov, V. A.; Mintairov, A. M.
Date:
2018-12-27
Copyright:
© 2018, Pleiades Publishing, Ltd. This a preprint of the Work accepted for publication in Semiconductors, available at: https://doi.org/10.1134/S1063782618140166
Citation:
Lebedev, D. V., Vlasov, A. S., Kulagina, M. M., Troshkov, S. I., Guseva, Y. A., Pelucchi, E., Gocalinska, A., Juska, G., Romanova, A. Y., Buriak, P. A., Smirnov, V. I., Shelaev, A. V., Bykov, V. A. and Mintairov, A. M. (2018) 'Low threshold lasing in InP/GaInP quantum dot microdisks', Semiconductors, 52(14), pp. 1894-1897. doi:10.1134/S1063782618140166
Abstract:
We report a realization of room temperature lasing threshold of 1 μW in GaInP microdisk containing a few self-aggregated InP/GaInP quantum dots (QDs) grown by metal-organic vapor phase epitaxy. InP/GaInP QD microdisk cavities emitting in the spectral range of 700–800 nm and having the size of ~2 μm, free spectral range of ~35 nm and quality factors Q ~ 4000 were formed by wet chemical etching. Low dot density (~2 μm–2) and large dot size (~150 nm), suggesting a single dot lasing and maximum overlap of QD and cavity mode, were achieved using deposition of 3 ML of InP layer at 700°C.
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