Citation:Arkani, R., Broderick, C. A. and O'Reilly, E. P. (2018) 'Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626250
We present a theoretical investigation of the optical properties of metamorphic InN\pmby(As 1-x Sb x ) 1-y /Al z In 1-z As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of Al z In 1-z As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In As 1-x Sb x QWs having emission wavelengths 3 μm on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2 μm, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4 μm. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InN y (As 1-x Sb x ) 1-y /Al z In 1-z As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.
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