Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Files in this item

Icon
Name: ieee_nano_metamor ...
Size: 385.1Kb
Format: PDF
Description: Accepted Version
View/Open

Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

Arkani, Reza; Broderick, Christopher A.; O'Reilly, Eoin P.
Date: 2018-07
Copyright: © 2018, European Union. Published by IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Related: https://ieeexplore.ieee.org/document/8626250
Citation: Arkani, R., Broderick, C. A. and O'Reilly, E. P. (2018) 'Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626250
Published Version: 10.1109/NANO.2018.8626250

Abstract:

We present a theoretical investigation of the optical properties of metamorphic InN\pmby(As 1-x Sb x ) 1-y /Al z In 1-z As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of Al z In 1-z As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In As 1-x Sb x QWs having emission wavelengths 3 μm on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2 μm, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4 μm. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InN y (As 1-x Sb x ) 1-y /Al z In 1-z As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.

Show full item record

This item appears in the following Collection(s)

This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement