Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography

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Date
2018-07
Authors
Zubialevich, Vitaly Z.
Pampili, Pietro
McLaren, M.
Arredondo-Arechavala, Miryam
Sabui, G.
Shen, Z. J.
Parbrook, Peter J.
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Institute of Electrical and Electronics Engineers (IEEE)
Published Version
10.1109/NANO.2018.8626265
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Abstract
A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.
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Keywords
Annealing , Gallium compounds , III-V semiconductors , Masks , Nanolithography , Nanostructured materials , Semiconductor growth , Wide band gap semiconductors , Dense nanocolumn arrays , Hybrid top-down-regrow approach , Dense locally ordered 2D arrays , Thermal annealing , Nonpolar m-plane facets , NC crystal quality , Array fill factor , Wet etching , Dry etching , Silica nanosphere hard masks , Height deviations , Nanocolumns , Nanosphere lithography , GaN , SiO2 , Gallium nitride , Surface treatment , MOCVD , Shape , Epitaxial growth , Optics
Citation
Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265
Link to publisher’s version
https://ieeexplore.ieee.org/document/8626265
URI
https://hdl.handle.net/10468/7638
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Tyndall National Institute - Conference Items
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