Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography
Zubialevich, Vitaly Z.; Pampili, Pietro; McLaren, M.; Arredondo-Arechavala, Miryam; Sabui, G.; Shen, Z. J.; Parbrook, Peter J.
Date:
2018-07
Copyright:
© 2018, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Zubialevich, V. Z., Pampili, P., McLaren, M., Arredondo-Arechavala, M., Sabui, G., Shen, Z. J. and Parbrook, P. J. (2018) 'Dense GaN nanocolumn arrays by hybrid top-down-regrow approach using nanosphere lithography', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626265
Abstract:
A comprehensive description of a procedure to form dense locally ordered 2D arrays of vertically aligned hexagonal in section GaN nanocolumns (NCs) without height deviations will be presented. Particular focus will be given for the preparation of silica nanosphere hard masks, dry etching to form GaN NCs, wet etching to modify NC shape, thermal annealing and regrowth to recover non-polar m-plane facets, improve NC crystal quality and array fill factor.
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