LED flip-chip assembly with electroplated AuSn alloy
Maaskant, Pleun P.; Akhter, Mahbub; Cordero, Nicolas; Casey, Declan P.; Rohan, James F.; Roycroft, Brendan J.; Corbett, Brian M.
Date:
2005-04-11
Copyright:
© 2005, WILEY‐VCH Verlag GmbH & Co. This is the accepted manuscript version of the following article: Maaskant, P. P., Akhter, M., Cordero, N., Casey, D. P., Rohan, J. F., Roycroft, B. J. and Corbett, B. M. (2005) 'LED flip-chip assembly with electroplated AuSn alloy', Physica Status Solidi (C), 2(7), pp. 2907-2911. doi:10.1002/pssc.200461566, which has been published in final form at https://doi.org/10.1002/pssc.200461566. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving.
Citation:
Maaskant, P. P., Akhter, M., Cordero, N., Casey, D. P., Rohan, J. F., Roycroft, B. J. and Corbett, B. M. (2005) 'LED flip-chip assembly with electroplated AuSn alloy', Physica Status Solidi (C), 2(7), pp. 2907-2911. doi:10.1002/pssc.200461566
Abstract:
InGaN based high brightness (HB)‐LED chips have been fabricated and bonded to substrates that were coated with electroplated Au/Sn/Au solder. The assemblies yielded a forward voltage of 5.6 V and an optical output power of 42 mW when tested at 1,000 mA bias. The electroluminescence distribution was mapped with a CCD camera to determine the current spreading into the p‐contact region. Computational fluid dynamics (CFD) was used to check the effect of non‐uniform current spreading on the thermal resistance of the assemblies. We show that a good knowledge of the non‐uniform heat generation is required to obtain accurate modelling results. The bond strength of the AuSn solder joints exceeded the norm, when shear tested according to MIL‐STD‐883E (method 2019.5).
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