Broderick, Christopher A.; O'Halloran, Edmond J.; Dunne, Michael D.; Kirwan, Amy C.; Andreev, Aleksey D.; Schulz, Stefan; O'Reilly, Eoin P.
(Institute of Electrical and Electronics Engineers (IEEE), 2020-07-13)
Alloying of Ge with other group-IV elements - C, Sn or Pb - represents a promising route to realise direct-gap group-IV semiconductors for applications in Si-compatible devices, including light-emitting diodes and lasers, ...