Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps

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Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps

Caruso, Enrico; Lin, Jun; Monaghan, Scott; Cherkaoui, Karim; Gity, Farzan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Hurley, Paul K.
Date: 2019-07-03
Copyright: © 2019 The Authors.
Related: https://infos2019-conf.org/
Citation: Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, Paul K. (2019) ‘Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps’, INFOS 2019, Cambridge University, UK. 31 June-3 July, Forthcoming.

Abstract:

This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a non-local model for interface states is required. The model is used to evaluate the energy/depth distribution of border traps in a n-In0.53Ga0.47As /Al2O3 MOS system.

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