Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps

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dc.contributor.authorCaruso, Enrico
dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorGity, Farzan
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorEsseni, David
dc.contributor.authorSelmi, Luca
dc.contributor.authorHurley, Paul K.
dc.contributor.funderHorizon 2020en
dc.date.accessioned2019-05-03T13:46:02Z
dc.date.available2019-05-03T13:46:02Z
dc.date.issued2019-07-03
dc.description.abstractThis work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a non-local model for interface states is required. The model is used to evaluate the energy/depth distribution of border traps in a n-In0.53Ga0.47As /Al2O3 MOS system.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCaruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, Paul K. (2019) ‘Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps’, INFOS 2019, Cambridge University, UK. 31 June-3 July, Forthcoming.en
dc.identifier.endpage2en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7854
dc.language.isoenen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.relation.urihttps://infos2019-conf.org/
dc.rights© 2019 The Authors.en
dc.subjectMOS structuresen
dc.subjectBorder trapsen
dc.subjectInterface trapsen
dc.subjectCapacitance - voltageen
dc.subjectMOS systemsen
dc.subjectQuantization modelen
dc.titleInvestigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface trapsen
dc.typeConference itemen
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