Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps
dc.contributor.author | Caruso, Enrico | |
dc.contributor.author | Lin, Jun | |
dc.contributor.author | Monaghan, Scott | |
dc.contributor.author | Cherkaoui, Karim | |
dc.contributor.author | Gity, Farzan | |
dc.contributor.author | Palestri, Pierpaolo | |
dc.contributor.author | Esseni, David | |
dc.contributor.author | Selmi, Luca | |
dc.contributor.author | Hurley, Paul K. | |
dc.contributor.funder | Horizon 2020 | en |
dc.date.accessioned | 2019-05-03T13:46:02Z | |
dc.date.available | 2019-05-03T13:46:02Z | |
dc.date.issued | 2019-07-03 | |
dc.description.abstract | This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a non-local model for interface states is required. The model is used to evaluate the energy/depth distribution of border traps in a n-In0.53Ga0.47As /Al2O3 MOS system. | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, Paul K. (2019) ‘Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps’, INFOS 2019, Cambridge University, UK. 31 June-3 July, Forthcoming. | en |
dc.identifier.endpage | 2 | en |
dc.identifier.startpage | 1 | en |
dc.identifier.uri | https://hdl.handle.net/10468/7854 | |
dc.language.iso | en | en |
dc.relation.project | info:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHT | en |
dc.relation.uri | https://infos2019-conf.org/ | |
dc.rights | © 2019 The Authors. | en |
dc.subject | MOS structures | en |
dc.subject | Border traps | en |
dc.subject | Interface traps | en |
dc.subject | Capacitance - voltage | en |
dc.subject | MOS systems | en |
dc.subject | Quantization model | en |
dc.title | Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps | en |
dc.type | Conference item | en |