Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps
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Date
2019-07-03
Authors
Caruso, Enrico
Lin, Jun
Monaghan, Scott
Cherkaoui, Karim
Gity, Farzan
Palestri, Pierpaolo
Esseni, David
Selmi, Luca
Hurley, Paul K.
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Abstract
This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligned with the semiconductor bandgap play a significant role in the C-V/G-V dispersion of a MOS structure. In addition, for the case of quantization, a non-local model for interface states is required. The model is used to evaluate the energy/depth distribution of border traps in a n-In0.53Ga0.47As /Al2O3 MOS system.
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Keywords
MOS structures , Border traps , Interface traps , Capacitance - voltage , MOS systems , Quantization model
Citation
Caruso, E.; Lin, J.; Monaghan, S.; Cherkaoui, K.; Gity, F.; Palestri, P.; Esseni, D.; Selmi, L.; Hurley, Paul K. (2019) ‘Investigating electrically active defect distributions in MOS structures based on inelastic tunneling interaction with border traps and a nonlocal model for interface traps’, INFOS 2019, Cambridge University, UK. 31 June-3 July, Forthcoming.
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© 2019 The Authors.