Synthesis and electrical and mechanical properties of silicon and germanium nanowires

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dc.contributor.author Wu, Xueyan
dc.contributor.author Kulkarni, Jaideep S.
dc.contributor.author Collins, Gillian
dc.contributor.author Petkov, Nikolay
dc.contributor.author Almecija, Dorothee
dc.contributor.author Boland, John J.
dc.contributor.author Erts, Donats
dc.contributor.author Holmes, Justin D.
dc.date.accessioned 2019-07-12T11:04:12Z
dc.date.available 2019-07-12T11:04:12Z
dc.date.issued 2008-08-13
dc.identifier.citation Wu, X., Kulkarni, J. S., Collins, G., Petkov, N., Almécija, D., Boland, J. J., Erts, D. and Holmes, J. D. (2008) 'Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires', Chemistry of Materials, 20(19), pp. 5954-5967. doi: 10.1021/cm801104s en
dc.identifier.volume 20 en
dc.identifier.issued 19 en
dc.identifier.startpage 5954 en
dc.identifier.endpage 5967 en
dc.identifier.issn 0897-4756
dc.identifier.uri http://hdl.handle.net/10468/8151
dc.identifier.doi 10.1021/cm801104s en
dc.description.abstract The development of semiconductor nanowires has recently been the focus of extensive research as these structures may play an important role in the next generation of nanoscale devices. Using semiconductor nanowires as building blocks, a number of high performance electronic devices have been fabricated. In this review, we discuss synthetic methodologies and electrical characteristics of Si, Ge, and Ge/Si core/shell nanowires. In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed. Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction, and dopant distribution within nanowires to produce nanowire-based electronics on a large scale. en
dc.description.sponsorship Trinity College Dublin (Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN)); European Regional Development Fund (ERAF/Eiropas Regionalas Attistibas Fonds) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher American Chemical Society, ACS en
dc.relation.uri https://pubs.acs.org/doi/abs/10.1021/cm801104s
dc.rights © 2008 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm801104s en
dc.subject Electric wire en
dc.subject Electric conductivity en
dc.subject Electric properties en
dc.subject Field effect transistors en
dc.subject Germanium en
dc.subject Mechanical properties en
dc.subject Nanostructured materials en
dc.subject Nanostructures en
dc.subject Nanowires en
dc.subject Semiconducting silicon compounds en
dc.subject Semiconductor devices en
dc.subject Semiconductor growth en
dc.subject Semiconductor materials en
dc.subject Silicon en
dc.subject Vapor-liquid-solid VLS en
dc.title Synthesis and electrical and mechanical properties of silicon and germanium nanowires en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2019-06-28T16:00:46Z
dc.description.version Accepted Version en
dc.internal.rssid 16860795
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Irish Research Council for Science, Engineering and Technology en
dc.contributor.funder Trinity College Dublin en
dc.contributor.funder European Regional Development Fund
dc.description.status Peer reviewed en
dc.identifier.journaltitle Chemistry of Materials en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en


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