Synthesis and electrical and mechanical properties of silicon and germanium nanowires

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dc.contributor.authorWu, Xueyan
dc.contributor.authorKulkarni, Jaideep S.
dc.contributor.authorCollins, Gillian
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorAlmecija, Dorothee
dc.contributor.authorBoland, John J.
dc.contributor.authorErts, Donats
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderTrinity College Dublinen
dc.contributor.funderEuropean Regional Development Fund
dc.date.accessioned2019-07-12T11:04:12Z
dc.date.available2019-07-12T11:04:12Z
dc.date.issued2008-08-13
dc.date.updated2019-06-28T16:00:46Z
dc.description.abstractThe development of semiconductor nanowires has recently been the focus of extensive research as these structures may play an important role in the next generation of nanoscale devices. Using semiconductor nanowires as building blocks, a number of high performance electronic devices have been fabricated. In this review, we discuss synthetic methodologies and electrical characteristics of Si, Ge, and Ge/Si core/shell nanowires. In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed. Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction, and dopant distribution within nanowires to produce nanowire-based electronics on a large scale.en
dc.description.sponsorshipTrinity College Dublin (Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN)); European Regional Development Fund (ERAF/Eiropas Regionalas Attistibas Fonds)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationWu, X., Kulkarni, J. S., Collins, G., Petkov, N., Almécija, D., Boland, J. J., Erts, D. and Holmes, J. D. (2008) 'Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires', Chemistry of Materials, 20(19), pp. 5954-5967. doi: 10.1021/cm801104sen
dc.identifier.doi10.1021/cm801104sen
dc.identifier.endpage5967en
dc.identifier.issn0897-4756
dc.identifier.issued19en
dc.identifier.journaltitleChemistry of Materialsen
dc.identifier.startpage5954en
dc.identifier.urihttps://hdl.handle.net/10468/8151
dc.identifier.volume20en
dc.language.isoenen
dc.publisherAmerican Chemical Society, ACSen
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/cm801104s
dc.rights© 2008 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/cm801104sen
dc.subjectElectric wireen
dc.subjectElectric conductivityen
dc.subjectElectric propertiesen
dc.subjectField effect transistorsen
dc.subjectGermaniumen
dc.subjectMechanical propertiesen
dc.subjectNanostructured materialsen
dc.subjectNanostructuresen
dc.subjectNanowiresen
dc.subjectSemiconducting silicon compoundsen
dc.subjectSemiconductor devicesen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor materialsen
dc.subjectSiliconen
dc.subjectVapor-liquid-solid VLSen
dc.titleSynthesis and electrical and mechanical properties of silicon and germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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