Synthesis and electrical and mechanical properties of silicon and germanium nanowires

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Wu, Xueyan
Kulkarni, Jaideep S.
Collins, Gillian
Petkov, Nikolay
Almecija, Dorothee
Boland, John J.
Erts, Donats
Holmes, Justin D.
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American Chemical Society, ACS
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The development of semiconductor nanowires has recently been the focus of extensive research as these structures may play an important role in the next generation of nanoscale devices. Using semiconductor nanowires as building blocks, a number of high performance electronic devices have been fabricated. In this review, we discuss synthetic methodologies and electrical characteristics of Si, Ge, and Ge/Si core/shell nanowires. In particular the fabrication and electrical properties of a variety of nanowire-based field effect transistors (FETs) are discussed. Although the bottom-up approach has the potential to go far beyond the limits of top-down technology, new techniques need to be developed to realize precise control of structural parameters, such as size uniformity, growth direction, and dopant distribution within nanowires to produce nanowire-based electronics on a large scale.
Electric wire , Electric conductivity , Electric properties , Field effect transistors , Germanium , Mechanical properties , Nanostructured materials , Nanostructures , Nanowires , Semiconducting silicon compounds , Semiconductor devices , Semiconductor growth , Semiconductor materials , Silicon , Vapor-liquid-solid VLS
Wu, X., Kulkarni, J. S., Collins, G., Petkov, N., Almécija, D., Boland, J. J., Erts, D. and Holmes, J. D. (2008) 'Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires', Chemistry of Materials, 20(19), pp. 5954-5967. doi: 10.1021/cm801104s
© 2008 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in Chemistry of Materials, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see