Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

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Supplementary data
Date
2019-07-08
Authors
Meija, Raimonds
Livshits, Alexander I.
Kosmaca, Jelena
Jasulaneca, Liga
Andzane, Jana
Biswas, Subhajit
Holmes, Justin D.
Erts, Donats
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IOP Publishing
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Abstract
Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.
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Keywords
NEMS , Nanowire , Resonance , Switch , Bi2Se3 , GeSn
Citation
Meija, R., Livshits, A. I., Kosmaca, J., Jasulaneca, L., Andzane, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches', Nanotechnology, 30(38), 385203 (6 pp). doi: 10.1088/1361-6528/ab2b11