Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

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Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

Meija, Raimonds; Livshits, Alexander I.; Kosmaca, Jelena; Jasulaneca, Liga; Andzane, Jana; Biswas, Subhajit; Holmes, Justin D.; Erts, Donats
Date: 2019-07-08
Copyright: © 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab2b11. As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
Copyright information: https://creativecommons.org/licences/by-nc-nd/3.0
Related: https://iopscience.iop.org/article/10.1088/1361-6528/ab2b11
Full text restriction information: Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date: 2020-07-08
Citation: Meija, R., Livshits, A. I., Kosmaca, J., Jasulaneca, L., Andzane, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches', Nanotechnology, 30(38), 385203 (6 pp). doi: 10.1088/1361-6528/ab2b11
Published Version: 10.1088/1361-6528/ab2b11

Abstract:

Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.

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© 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab2b11. As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. Except where otherwise noted, this item's license is described as © 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab2b11. As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
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