Investigating the mechanical properties of GeSn nanowires.

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dc.contributor.author Kosmaca, Jelena
dc.contributor.author Meija, Raimonds
dc.contributor.author Antsov, Mikk
dc.contributor.author Kunakova, Gunta
dc.contributor.author Sonders, Raitis
dc.contributor.author Iatsunskyi, Igor
dc.contributor.author Coy, Emerson
dc.contributor.author Doherty, Jessica
dc.contributor.author Biswas, Subhajit
dc.contributor.author Holmes, Justin D.
dc.contributor.author Erts, Donats
dc.date.accessioned 2019-07-22T11:39:12Z
dc.date.available 2019-07-22T11:39:12Z
dc.date.issued 2019-07-10
dc.identifier.citation Kosmaca, J., Meija, R., Antsov, M., Kunakova, G., Sondors, R., Iatsunskyi, I., Coy, E., Doherty, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Investigating the mechanical properties of GeSn nanowires', Nanoscale, 11(28), pp. 13612-13619. doi: 10.1039/c9nr02740h en
dc.identifier.volume 11 en
dc.identifier.issued 28 en
dc.identifier.startpage 13612 en
dc.identifier.endpage 13619 en
dc.identifier.issn 2040-3372
dc.identifier.uri http://hdl.handle.net/10468/8214
dc.identifier.doi 10.1039/c9nr02740h en
dc.description.abstract Germanium tin (GeSn) has been proposed as a promising material for electronic and optical applications due to the formation of a direct band-gap at a Sn content >7 at%. Furthermore, the ability to manipulate the properties of GeSn at the nanoscale will further permit the realisation of advanced mechanical devices. Here we report for the first time the mechanical properties of GeSn nanowires (7.1–9.7 at% Sn) and assess their suitability as nanoelectromechanical (NEM) switches. Electron microscopy analysis showed the nanowires to be single crystalline, with surfaces covered by a thin native amorphous oxide layer. Mechanical resonance and bending tests at different boundary conditions were used to obtain size-dependent Young's moduli and to relate the mechanical characteristics of the alloy nanowires to geometry and Sn incorporation. The mechanical properties of the GeSn nanowires make them highly promising for applications in next generation NEM devices. en
dc.description.sponsorship European Regional Development Fund (project no. 1.1.1.1/16/A/256, “Creation of nanoelectromechanical switches”); Irish Research Council (Grant No: GOIPG/2015/2772) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher Royal Society of Chemistry (RSC) en
dc.relation.uri https://pubs.rsc.org/en/content/articlelanding/2019/nr/c9nr02740h#!divAbstract
dc.rights © The Royal Society of Chemistry 2019 en
dc.subject Germanium tin alloy en
dc.subject Nanowire en
dc.subject Size dependence en
dc.subject Mechanical behaviour en
dc.title Investigating the mechanical properties of GeSn nanowires. en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Justin D. Holmes, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: j.holmes@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-07-10
dc.date.updated 2019-07-19T07:43:52Z
dc.description.version Accepted Version en
dc.internal.rssid 493410501
dc.internal.pmid 31290891
dc.contributor.funder European Regional Development Fund en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Irish Research Council en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Nanoscale en
dc.internal.copyrightchecked No
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress j.holmes@ucc.ie en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ en


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