Atomically flat low-resistive germanide contacts formed by laser thermal anneal
Shayesteh, Maryam; Huet, Karim; Toqué-Tresonne, Inès; Negru, Razvan; Daunt, Chris L. M.; Kelly, Niall; O'Connell, Dan; Yu, Ran; Djara, Vladimir; Carolan, Patrick B.; Petkov, Nikolay; Duffy, Ray
Date:
2013-06-12
Copyright:
© 2013, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Citation:
Shayesteh, M., Huet, K., Toqué-Tresonne, I., Negru, R., Daunt, C. L. M., Kelly, N., O'Connell, D., Yu, R., Djara, Vl., Carolan, P. B., Petkov, N. and Duffy, R. (2013) 'Atomically flat low-resistive germanide contacts formed by laser thermal anneal', IEEE Transactions on Electron Devices, 60(7), pp. 2178-2185. doi: 10.1109/TED.2013.2263336
Abstract:
In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84 × 10 -7 Ω·cm 2 is achieved for optimized laser thermal anneal energy density conditions.
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