Investigating positive oxide charge in the SiO2/3C-SiC MOS system

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dc.contributor.author Cherkaoui, Karim
dc.contributor.author Blake, Alan
dc.contributor.author Gomeniuk, Yuri Y.
dc.contributor.author Lin, Jun
dc.contributor.author Sheehan, Brendan
dc.contributor.author White, Mary
dc.contributor.author Hurley, Paul K.
dc.contributor.author Ward, Peter J.
dc.date.accessioned 2019-10-28T07:14:30Z
dc.date.available 2019-10-28T07:14:30Z
dc.date.issued 2018-08-29
dc.identifier.citation Cherkaoui, K., Blake, A., Gomeniuk, Y.Y., Lin, J., Sheehan, B., White, M., Hurley, P.K. and Ward, P.J., 2018. Investigating positive oxide charge in the SiO2/3C-SiC MOS system. AIP Advances, 8(8), 085323, (9 pp.). DOI:10.1063/1.5030636 en
dc.identifier.volume 8 en
dc.identifier.issued 8 en
dc.identifier.startpage 1 en
dc.identifier.endpage 9 en
dc.identifier.uri http://hdl.handle.net/10468/8893
dc.identifier.doi 10.1063/1.5030636 en
dc.description.abstract This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/10.1063/1.5030636
dc.rights © 2018 Author(s). en
dc.rights.uri https://creativecommons.org/licenses/by/4.0/ en
dc.subject Metal Oxide Semiconductor (MOS) en
dc.subject SiO2 en
dc.subject Cubic silicon carbide (3C-SiC) en
dc.subject Plasma Enhanced Chemical Vapour Deposition (PECVD) en
dc.subject Positive oxide charge en
dc.title Investigating positive oxide charge in the SiO2/3C-SiC MOS system en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Karim Cherkaou, Tyndall National Institute, University College Cork, Cork, Ireland. +353-21-490-3000 Email: karim.cherkaoui@tyndall.ie en
dc.internal.availability Full text available en
dc.description.version Published Version en
dc.description.status Peer reviewed en
dc.identifier.journaltitle AIP Advances en
dc.internal.IRISemailaddress karim.cherkaoui@tyndall.ie en
dc.identifier.articleid 085323 en
dc.identifier.eissn 2158-3226


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