Investigating positive oxide charge in the SiO2/3C-SiC MOS system

Simple item page
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorBlake, Alan
dc.contributor.authorGomeniuk, Yuri Y.
dc.contributor.authorLin, Jun
dc.contributor.authorSheehan, Brendan
dc.contributor.authorWhite, Mary
dc.contributor.authorHurley, Paul K.
dc.contributor.authorWard, Peter J.
dc.date.accessioned2019-10-28T07:14:30Z
dc.date.available2019-10-28T07:14:30Z
dc.date.issued2018-08-29
dc.description.abstractThis paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid085323en
dc.identifier.citationCherkaoui, K., Blake, A., Gomeniuk, Y.Y., Lin, J., Sheehan, B., White, M., Hurley, P.K. and Ward, P.J., 2018. Investigating positive oxide charge in the SiO2/3C-SiC MOS system. AIP Advances, 8(8), 085323, (9 pp.). DOI:10.1063/1.5030636en
dc.identifier.doi10.1063/1.5030636en
dc.identifier.eissn2158-3226
dc.identifier.endpage9en
dc.identifier.issued8en
dc.identifier.journaltitleAIP Advancesen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8893
dc.identifier.volume8en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5030636
dc.rights© 2018 Author(s).en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectMetal Oxide Semiconductor (MOS)en
dc.subjectSiO2en
dc.subjectCubic silicon carbide (3C-SiC)en
dc.subjectPlasma Enhanced Chemical Vapour Deposition (PECVD)en
dc.subjectPositive oxide chargeen
dc.titleInvestigating positive oxide charge in the SiO2/3C-SiC MOS systemen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
1.5030636.pdf
Size:
1.02 MB
Format:
Adobe Portable Document Format
Description:
Published version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles