Investigating positive oxide charge in the SiO2/3C-SiC MOS system

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Cherkaoui, Karim
Blake, Alan
Gomeniuk, Yuri Y.
Lin, Jun
Sheehan, Brendan
White, Mary
Hurley, Paul K.
Ward, Peter J.
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This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.
Metal Oxide Semiconductor (MOS) , SiO2 , Cubic silicon carbide (3C-SiC) , Plasma Enhanced Chemical Vapour Deposition (PECVD) , Positive oxide charge
Cherkaoui, K., Blake, A., Gomeniuk, Y.Y., Lin, J., Sheehan, B., White, M., Hurley, P.K. and Ward, P.J., 2018. Investigating positive oxide charge in the SiO2/3C-SiC MOS system. AIP Advances, 8(8), 085323, (9 pp.). DOI:10.1063/1.5030636