High power surface emitting InGaN superluminescent light-emitting diodes

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High power surface emitting InGaN superluminescent light-emitting diodes

Cahill, Rory; Maaskant, Pleun P.; Akhter, Mahbub; Corbett, Brian
Date: 2019-10-21
Copyright: © 2019, Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Cahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp), doi: 10.1063/1.5118953, and may be found at https://doi.org/10.1063/1.5118953
Related: https://aip.scitation.org/doi/10.1063/1.5118953
Full text restriction information: Access to this article is restricted until 12 months after publication by request of the publisher.
Restriction lift date: 2020-10-21
Citation: Cahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp). doi: 10.1063/1.5118953
Published Version: 10.1063/1.5118953

Abstract:

A high power InGaN superluminescent light-emitting diode emitting normal to the substrate is demonstrated. The device uses a structure in which a monolithically integrated turning mirror reflects the light at both ends of the in-plane waveguide to direct amplified spontaneous emission downward through the transparent GaN substrate. Record optical peak powers of >2 W (both outputs) are reported under pulsed operation at 1% duty cycle. A broad, smooth emission spectrum with a FWHM of 6 nm centered at 416 nm is measured at peak output and ascribed to very low feedback associated with the turning mirror and antireflection coating.

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