High power surface emitting InGaN superluminescent light-emitting diodes

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dc.contributor.author Cahill, Rory
dc.contributor.author Maaskant, Pleun P.
dc.contributor.author Akhter, Mahbub
dc.contributor.author Corbett, Brian
dc.date.accessioned 2019-11-07T12:52:52Z
dc.date.available 2019-11-07T12:52:52Z
dc.date.issued 2019-10-21
dc.identifier.citation Cahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp). doi: 10.1063/1.5118953 en
dc.identifier.volume 115 en
dc.identifier.issued 17 en
dc.identifier.startpage 1 en
dc.identifier.endpage 5 en
dc.identifier.issn 0003-6951
dc.identifier.uri http://hdl.handle.net/10468/8974
dc.identifier.doi 10.1063/1.5118953 en
dc.description.abstract A high power InGaN superluminescent light-emitting diode emitting normal to the substrate is demonstrated. The device uses a structure in which a monolithically integrated turning mirror reflects the light at both ends of the in-plane waveguide to direct amplified spontaneous emission downward through the transparent GaN substrate. Record optical peak powers of >2 W (both outputs) are reported under pulsed operation at 1% duty cycle. A broad, smooth emission spectrum with a FWHM of 6 nm centered at 416 nm is measured at peak output and ascribed to very low feedback associated with the turning mirror and antireflection coating. en
dc.description.sponsorship European Commission (European Structural and Investment Funds 2014–2020 program) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher AIP Publishing en
dc.relation.uri https://aip.scitation.org/doi/10.1063/1.5118953
dc.rights © 2019, Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Cahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp), doi: 10.1063/1.5118953, and may be found at https://doi.org/10.1063/1.5118953 en
dc.subject Antireflection coating en
dc.subject Turning mirror en
dc.subject InGaN superluminescent light-emitting diode en
dc.subject Transparent GaN substrate en
dc.title High power surface emitting InGaN superluminescent light-emitting diodes en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Rory Cahill, Physics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: rory.cahill@ucc.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2020-10-21
dc.date.updated 2019-11-07T12:43:01Z
dc.description.version Published Version en
dc.internal.rssid 499911456
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder European Commission en
dc.description.status Peer reviewed en
dc.identifier.journaltitle Applied Physics Letters en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress rory.cahill@ucc.ie en
dc.identifier.articleid 171102 en
dc.identifier.eissn 1077-3118


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