Modeling 1/f and Lorenzian noise in III-V MOSFETs

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Modeling 1/f and Lorenzian noise in III-V MOSFETs

Caruso, Enrico; Bettetti, F.; Del Linz, L.; Pin, D.; Segatto, M.; Palestri, P.
Date: 2019-09
Copyright: © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Related: https://ieeexplore.ieee.org/document/8870548
Citation: Caruso, E., Bettetti, F., Linz, L. D., Pin, D., Segatto, M. and Palestri, P. (2019) 'Modeling 1/f and Lorenzian noise in III-V MOSFETs', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. doi: 10.1109/SISPAD.2019.8870548
Published Version: 10.1109/SISPAD.2019.8870548

Abstract:

We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.

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