Citation:Caruso, E., Bettetti, F., Linz, L. D., Pin, D., Segatto, M. and Palestri, P. (2019) 'Modeling 1/f and Lorenzian noise in III-V MOSFETs', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. doi: 10.1109/SISPAD.2019.8870548
We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.
Gu, Fengyun; Wu, Qi; O'Sullivan, Finbarr; Huang, Jian; Muzi, Mark; Mankoff, David A.(Institute of Electrical and Electronics Engineers (IEEE), 2019-11)
Kinetic mapping via mixture analysis[8], [10] involves comprehensive voxel-level analysis of dynamic PET data. Bootstrapping from the fitted mixture model gives the ability to directly simulate statistical copies of the ...
Kumar, Sanjeev; Buckley, John; Di Serio, Adolfo; O'Flynn, Brendan(Institute of Electrical and Electronics Engineers (IEEE), 2018-12-24)
Antennas are a critical component of an internet of things device and are typically modelled using full-wave electromagnetic (EM) solvers for their optimal design. In this paper, we investigate and compare the impact, ...
Molina Salgado, Gerardo; Dicataldo, Alberto; O'Hare, Daniel; O'Connell, Ivan; de la Rosa, José M.(Institute of Electrical and Electronics Engineers (IEEE), 2018-05-04)
This paper presents a toolbox for the behavioral simulation of SAR ADCs in Simulink®. The models include the most limiting circuit effects such as sampled thermal noise, capacitor mismatch, finite settling, comparator noise ...
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