Modeling 1/f and Lorenzian noise in III-V MOSFETs

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Date
2019-09
Authors
Caruso, Enrico
Bettetti, F.
Del Linz, L.
Pin, D.
Segatto, M.
Palestri, Pierpaolo
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Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
10.1109/SISPAD.2019.8870548
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Abstract
We present an approach to model 1/f and random telegraph noise in TCAD combining the models for non-local tunneling to traps and generation/recombination noise. The TCAD results are compared with simple numerical expression to understand the influence of the device and trap parameters on the noise spectrum. The simulation deck is then used to compute the low-frequency noise spectrum in III-V MOSFETs using traps distributions extracted from multi-frequency C-V measurements.
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Keywords
1/f noise , MOSFET , Semiconductor device models , Semiconductor device noise , Technology CAD (electronics) , III-V MOSFET , Random telegraph noise , Nonlocal tunneling , TCAD results , Trap parameters , Low-frequency noise spectrum , Traps distributions , Lorenzian noise , 1/f modeling , Generation-recombination noise , Multifrequency C-V measurements , Tunneling , Numerical models , Capacitance-voltage characteristics , Fluctuations , Semiconductor device modeling , Low-frequency noise , Lorenzian , 1/f , Border traps , Modelling , TCAD , Noise
Citation
Caruso, E., Bettetti, F., Linz, L. D., Pin, D., Segatto, M. and Palestri, P. (2019) 'Modeling 1/f and Lorenzian noise in III-V MOSFETs', 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, 4-6 Sept. doi: 10.1109/SISPAD.2019.8870548
Link to publisher’s version
https://ieeexplore.ieee.org/document/8870548
URI
https://hdl.handle.net/10468/9167
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Tyndall National Institute - Conference Items
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