Scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P. R.; Hourahine, B.; Kraeusel, S.; Kusch, G.; Johnston, R.; Naresh-Kumar, G.; Martin, R. W.; Nouf-Allehiani, M.; Pascal, E.; Spasevski, L.; Thomson, D.; Vespucci, S.; Parbrook, Peter J.; Smith, M. D.; Enslin, J.; Mehnke, F.; Kneissl, M.; Kuhn, C.; Wernicke, T.; Hagedorn, S.; Knauer, A.; Kueller, V.; Walde, S.; Weyers, M.; Coulon, P. M.; Shields, P. A.; Zhang, Y.; Jiu, L.; Gong, Y.; Smith, R. M.; Wang, T.; Winkelmann, A.
Date:
2019-10-30
Copyright:
© The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI
Citation:
Trager-Cowan, C., Alasmari, A., Avis, W., Bruckbauer, J., Edwards, P. R., Hourahine, B., Kraeusel, S., Kusch, G., Johnston, R., Naresh-Kumar, G., Martin, R. W., Nouf-Allehiani, M., Pascal, E., Spasevski, L., Thomson, D., Vespucci, S., Parbrook, P. J., Smith, M. D., Enslin, J., Mehnke, F., Kneissl, M., Kuhn, C., Wernicke, T., Hagedorn, S., Knauer, A., Kueller, V., Walde, S., Weyers, M., Coulon, P. M., Shields, P. A., Zhang, Y., Jiu, L., Gong, Y., Smith, R. M., Wang, T. and Winkelmann, A. (2019) 'Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films', Photonics Research, 7(11), pp. 73-82. doi: 10.1364/PRJ.7.000B73
Abstract:
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
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Except where otherwise noted, this item's license is described as © The Author(s) 2019. Published by Chinese Laser Press under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI