Edge-coupling of O-Band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printing

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Loi, Ruggero
Iadanza, Simone
Roycroft, Brendan
O'Callaghan, James
Liu, Lei
Thomas, Kevin
Gocalińska, Agnieszka M.
Pelucchi, Emanuele
Farrell, Alexander
Kelleher, Steven
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Institute of Electrical and Electronics Engineers (IEEE)
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O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.
Waveguide lasers , Optical waveguides , Polymers , Silicon , Laser modes , Substrates , Metals , Heterogeneous integration , III-V semiconductors laser , silicon photonics , polymer waveguides
Loi, R., Iadanza, S., Roycroft, B., O’Callaghan, J., Liu, L., Thomas, K., Gocalinska, A., Pelucchi, E., Farrell, A., Kelleher, S., Gul, R. F., Trindade, A. J., Gomez, D., O’Faolain, L. and Corbett, B. (2020) 'Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing', IEEE Journal of Quantum Electronics, 56(1), pp. 1-8. doi: 10.1109/JQE.2019.2958365