Edge-coupling of O-Band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printing
Loi, Ruggero; Iadanza, Simone; Roycroft, Brendan; O'Callaghan, James; Liu, Lei; Thomas, Kevin; Gocalińska, Agnieszka M.; Pelucchi, Emanuele; Farrell, Alexander; Kelleher, Steven; Gul, Raja Fazan; Trindade, António José; Gomez, David; O'Faolain, Liam; Corbett, Brian
Date:
2019-12-09
Copyright:
© 2020 the authors. Published by IEEE. This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/
Citation:
Loi, R., Iadanza, S., Roycroft, B., O’Callaghan, J., Liu, L., Thomas, K., Gocalinska, A., Pelucchi, E., Farrell, A., Kelleher, S., Gul, R. F., Trindade, A. J., Gomez, D., O’Faolain, L. and Corbett, B. (2020) 'Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing', IEEE Journal of Quantum Electronics, 56(1), pp. 1-8. doi: 10.1109/JQE.2019.2958365
Abstract:
O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.
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Except where otherwise noted, this item's license is described as © 2020 the authors. Published by IEEE. This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/