Investigating the transient response of Schottky barrier back-gated MoS2 transistors

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dc.contributor.author Marquez, Carlos
dc.contributor.author Salazar, Norberto
dc.contributor.author Gity, Farzan
dc.contributor.author Navarro, Carlos
dc.contributor.author Mirabelli, Gioele
dc.contributor.author Galdon, Jose Carlos
dc.contributor.author Duffy, Ray
dc.contributor.author Navarro, Santiago
dc.contributor.author Hurley, Paul K.
dc.contributor.author Gamiz, Francisco
dc.date.accessioned 2020-02-28T12:24:25Z
dc.date.available 2020-02-28T12:24:25Z
dc.date.issued 2020-02-13
dc.identifier.citation Marquez, C., Salazar, N., Gity, F., Navarro, C., Mirabelli, G., Galdon, J. C., Duffy, R., Navarro, S., Hurley, P. K. and Gamiz, F. (2020) 'Investigating the transient response of Schottky barrier back-gated MoS2 transistors', 2D Materials. doi: 10.1088/2053-1583/ab7628 en
dc.identifier.uri http://hdl.handle.net/10468/9714
dc.identifier.doi 10.1088/2053-1583/ab7628 en
dc.description.abstract Molybdenum disulfide (MoS2) MOSFETs have been widely reported to exhibit hysteresis behavior, which is usually attributed to charge trapping effects due to defective/sub-stoichiometric compositions in the material, or defects near, or at, the oxide/channel interfaces. It is also suggested that defective MoS2 transistors show current limitations caused by the Schottky barrier junctions formed at the contacts. Here, we report on the static and dynamic device response of back-gated MoS$_2$ transistors directly fabricated on a SiO2/Si substrate using chemical vapor deposition synthesis, without film transfer, and standard CMOS optical lithography. The devices exhibit an atypical hysteresis in the transfer characteristics, as well as a delayed response in the formation of the conducting channel in response to voltage pulses applied to the back gate. Analysis of the output characteristic is consistent with two back-to-back Schottky diodes, allowing the Fermi level pinning position at the Ni/MoS2 source and drain contacts and blocking the MoS2 hole channel. Capacitance-voltage characterization demonstrates that the grown MoS2 thin film is p-type, resulting in a nominally-off, inversion mode, n-channel device. Analysis of the transient response and hysteresis as a function of device temperature, illumination and ambient conditions indicates that the dynamic response of the device is determined by the net charge in the MoS2 film combined with the minority carrier generation lifetime in the underlying silicon substrate. The work demonstrates the strong dependence of the device response time on substrate, temperature, illumination, and net charge in the MoS2 layer opening the possibility of applications in photo-detectors and sensors. en
dc.description.sponsorship Spanish National Program (Grant No. TEC2017-89800-R); Science Foundation Ireland (12/RC/2278-P2); Jose Castillejo Mobility Grant (No. CAS18/00460); Universidad de Granada (Plan Propio Programme 8) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.relation.uri http://iopscience.iop.org/10.1088/2053-1583/ab7628
dc.rights © 2020, IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Defects en
dc.subject Hysteresis en
dc.subject MoS2 en
dc.subject Schottky barrier transistors en
dc.subject Two-dimensional materials en
dc.subject Reliability en
dc.title Investigating the transient response of Schottky barrier back-gated MoS2 transistors en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Paul Hurley, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: paul.hurley@tyndall.ie en
dc.internal.availability Full text available en
dc.check.info Access to this article is restricted until 12 months after publication by request of the publisher. en
dc.check.date 2021-02-13
dc.date.updated 2020-02-19T12:18:53Z
dc.description.version Accepted Version en
dc.internal.rssid 503258609
dc.contributor.funder Horizon 2020 en
dc.contributor.funder Spanish National Program en
dc.contributor.funder Science Foundation Ireland en
dc.contributor.funder Universidad de Granada en
dc.description.status Peer reviewed en
dc.identifier.journaltitle 2D Materials en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress paul.hurley@tyndall.ie en
dc.internal.bibliocheck In press. Check vol / issue / page range. Amend citation as necessary. en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENT en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/ en
dc.identifier.eissn 2053-1583


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© 2020, IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. Except where otherwise noted, this item's license is described as © 2020, IOP Publishing. This Accepted Manuscript is available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.
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