Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment

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dc.contributor.authorGity, Farzan
dc.contributor.authorAnsari, Lida
dc.contributor.authorMonaghan, Scott
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorTorchia, Pasqualino
dc.contributor.authorHydes, Alan
dc.contributor.authorSchmidt, Michael
dc.contributor.authorSheehan, Brendan
dc.contributor.authorMcEvoy, Niall
dc.contributor.authorHallam, Toby
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorNagle, Roger
dc.contributor.authorDuffy, Ray
dc.contributor.authorDuesberg, Georg S.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-20T14:08:21Z
dc.date.available2022-07-20T14:08:21Z
dc.date.issued2018-04-30
dc.date.updated2022-07-19T20:40:44Z
dc.description.abstractControllable doping of two-dimensional (2D) materials is one of the main research challenges associated with the practical realization of 2D semiconductors in hetero-and homo-junctions. We report that the selected-area treatment of MoS2 films with nitrogen plasma can modify the resistivity of the film. To identify the underlying physical mechanism responsible for such observation, we systematically investigated the transport properties of cTLM-patterned contacts on ~70nm non-intentionally doped (NID), p-and p-doped MoS 2 films before and after plasma exposure. Electrical characterization demonstrates that p-type doping of MoS2 is achieved by plasma-induced nitrogen doping. HR-TEM images confirm that no etching of the exposed film has occurred. Our experimental observations are supported by first principles atomic scale simulations suggesting the interaction of nitrogen with defects and vacancies in the poly-crystalline MoS2 films as the origin of doping mechanism. The results indicate low-power nitrogen plasma is an effective approach for ex-situ doping of MoS2 .en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGity, F., Ansari, L., Monaghan, S., Mirabelli, G., Torchia, P., Hydes, A., Schmidt, M., Sheehan, B., McEvoy, N., Hallam, T., Cherkaoui, K., Nagle, R., Duffy, R., Duesberg, G. S. and Hurley, P. K. (2017) 'Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment', 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), pp. 175-176. doi: 10.1109/NMDC.2017.8350544en
dc.identifier.doi10.1109/NMDC.2017.8350544en
dc.identifier.endpage176en
dc.identifier.isbn978-1-5386-2772-3
dc.identifier.isbn978-1-5386-2771-6
dc.identifier.isbn978-1-5386-2773-0
dc.identifier.startpage175en
dc.identifier.urihttps://hdl.handle.net/10468/13383
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), Singapore,2-4 October
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.rights© 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectNanoelectronicsen
dc.subjectPlasma dopingen
dc.subjectModelingen
dc.subject2D materialsen
dc.titleEx-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experimenten
dc.typeConference itemen
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