Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment
Loading...
Files
Accepted Version
Date
2018-04-30
Authors
Gity, Farzan
Ansari, Lida
Monaghan, Scott
Mirabelli, Gioele
Torchia, Pasqualino
Hydes, Alan
Schmidt, Michael
Sheehan, Brendan
McEvoy, Niall
Hallam, Toby
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
Controllable doping of two-dimensional (2D) materials is one of the main research challenges associated with the practical realization of 2D semiconductors in hetero-and homo-junctions. We report that the selected-area treatment of MoS2 films with nitrogen plasma can modify the resistivity of the film. To identify the underlying physical mechanism responsible for such observation, we systematically investigated the transport properties of cTLM-patterned contacts on ~70nm non-intentionally doped (NID), p-and p-doped MoS 2 films before and after plasma exposure. Electrical characterization demonstrates that p-type doping of MoS2 is achieved by plasma-induced nitrogen doping. HR-TEM images confirm that no etching of the exposed film has occurred. Our experimental observations are supported by first principles atomic scale simulations suggesting the interaction of nitrogen with defects and vacancies in the poly-crystalline MoS2 films as the origin of doping mechanism. The results indicate low-power nitrogen plasma is an effective approach for ex-situ doping of MoS2 .
Description
Keywords
Nanoelectronics , Plasma doping , Modeling , 2D materials
Citation
Gity, F., Ansari, L., Monaghan, S., Mirabelli, G., Torchia, P., Hydes, A., Schmidt, M., Sheehan, B., McEvoy, N., Hallam, T., Cherkaoui, K., Nagle, R., Duffy, R., Duesberg, G. S. and Hurley, P. K. (2017) 'Ex-situ plasma doping of MoS2 thin films synthesised by thermally assisted conversion process: Simulations and experiment', 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC), pp. 175-176. doi: 10.1109/NMDC.2017.8350544
Link to publisher’s version
Copyright
© 2017, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.