Towards Ge-based electronic devices: Increased longevity of alkanethiol-passivated Ge(100) in low humidity environments

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dc.contributor.authorGarvey, Shane
dc.contributor.authorSerino, Andrew
dc.contributor.authorMaccioni, Maria Barbara
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorNolan, Michael
dc.contributor.authorDraeger, Nerissa
dc.contributor.authorGurer, Emir
dc.contributor.authorLong, Brenda
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2022-11-16T16:18:08Z
dc.date.available2022-11-16T16:18:08Z
dc.date.issued2022-09-16
dc.date.updated2022-11-14T12:30:22Z
dc.description.abstractGermanium is a critically important material for future complementary metal-oxide-semiconductor devices, however, to maximise its potential it is necessary to develop a robust passivation process that prevents Ge re-oxidation for a queue time of 24 h. Self-assembled monolayers (SAMs) of alkanethiols on Ge have previously been shown to inhibit oxidation; however, re-oxidation eventually occurs when exposed to ambient conditions. Herein, it is shown that humidity plays a key role in the degradation of the SAM, ultimately resulting in re-oxidation. To demonstrate this, thiol-passivated Ge(100) surfaces are exposed to controlled humidity environments with different levels of relative humidity (RH). The rate of re-oxidation of the Ge surfaces are tracked using X-ray photoelectron spectroscopy and water contact angle analysis to discern what role RH plays in the re-oxidation of the Ge and the degradation of the SAM passivation. Atomic force microscopy data is presented to show that humidity-mediated re-oxidation of the Ge has little or no impact on the route mean square roughness of those surfaces. Finally, atomistic modelling of thiol-SAM passivated Ge in the presence of water molecules has been studied using first principles density functional theory in order to simulate experimental conditions and to understand the atomic level processes that determine stability in hydrophilic and hydrophobic configurations.en
dc.description.sponsorshipEnterprise Ireland (EI IP 20190757A; EI IP 20190757B)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid139466en
dc.identifier.citationGarvey, S., Serino, A., Maccioni, M. B., Holmes, J. D., Nolan, M., Draeger, N., Gurer, E. and Long, B. (2022) 'Towards Ge-based electronic devices: Increased longevity of alkanethiol-passivated Ge(100) in low humidity environments', Thin Solid Films, 759, 139466 (13pp). doi: 10.1016/j.tsf.2022.139466en
dc.identifier.doi10.1016/j.tsf.2022.139466en
dc.identifier.eissn1879-2731
dc.identifier.endpage13en
dc.identifier.issn0040-6090
dc.identifier.journaltitleThin Solid Filmsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13864
dc.identifier.volume759en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0040609022003790
dc.rights© 2022, the Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectGermaniumen
dc.subjectHumidityen
dc.subjectPassivationen
dc.subjectSelf-assembled monolayersen
dc.subjectStabilityen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleTowards Ge-based electronic devices: Increased longevity of alkanethiol-passivated Ge(100) in low humidity environmentsen
dc.typeArticle (peer-reviewed)en
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