Structural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metal

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dc.contributor.authorDuffy, Ray
dc.contributor.authorFoley, Patrick
dc.contributor.authorFilippone, Bruno
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorO'Connell, Dan
dc.contributor.authorSheehan, Brendan
dc.contributor.authorCarolan, Patrick B.
dc.contributor.authorSchmidt, Michael
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorGatensby, Riley
dc.contributor.authorHallam, Toby
dc.contributor.authorDuesberg, Georg S.
dc.contributor.authorCrupi, Felice
dc.contributor.authorNagle, Roger E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2017-01-20T14:24:24Z
dc.date.available2017-01-20T14:24:24Z
dc.date.issued2016-06-30
dc.date.updated2017-01-20T14:14:43Z
dc.description.abstractLarge-area synthesis is of great demand for the preparation of high-performance transition-metal-dichalcogenides (TMD) devices, however there are only limited reports to date of device operation on large-area TMDs. In this work we fabricate MoS2 devices based on Thermal Assisted Conversion (TAC) of metal layers, and characterize the thin-films with material analysis combined with electrical device parameter extraction. Specifically we report on temperature dependent parameter extraction for Ti/Au contacts to MoS2 thin-films to determine sheet resistance (Rsh), resistivity (ρ), and the activation energy (EA) of on-state current flow. For undoped MoS2, ρ was determined to be 191 Ω.cm at 25°C. The activation energy of the on-state current was found to be 0.18 eV, pointing to the presence of deep levels in MoS2.en
dc.description.sponsorshipScience Foundation Ireland (Contract No. 12/RC/2278 and PI_10/IN.1/I3030; US-Ireland R&D Partnership Programme “Understanding the Nature of Interfaces in Two Dimensional Electronics (UNITE)” grant Number SFI/13/US/I2862); Higher Education Authority (Programme for Research in Third Level Institutions in Ireland under grant Agreement no. HEA PRTLI5.)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDuffy, R., Foley, P., Filippone, B., Mirabelli, G., O'Connell, D., Sheehan, B., Carolan, P., Schmidt, M., Cherkaoui, K., Gatensby, R., Hallam, T., Duesberg, G., Crupi, F., Nagle, R. and Hurley, P. K. (2016) 'Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal', ECS Journal of Solid State Science and Technology, 5(11), pp. Q3016-Q3020.en
dc.identifier.doi10.1149/2.0041611jss
dc.identifier.endpageQ3020en
dc.identifier.issn2162-8769
dc.identifier.issued11en
dc.identifier.journaltitleECS Journal of Solid State Science and Technologyen
dc.identifier.startpageQ3016en
dc.identifier.urihttps://hdl.handle.net/10468/3489
dc.identifier.volume5en
dc.language.isoenen
dc.publisherIEEEen
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectElectron devicesen
dc.subjectMoS2en
dc.subjectResistivityen
dc.subjectThin-filmsen
dc.subjectTMDsen
dc.titleStructural and electrical investigation of MoS2 thin films formed by thermal assisted conversion of Mo metalen
dc.typeArticle (peer-reviewed)en
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