Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration
Povey, Ian M.
Hurley, Paul K.
In0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices.
Alumina , Capacitance , Carrier lifetime , Doping profiles , Electric admittance , Gallium arsenide , III-V semiconductors , Indium compounds , Minority carriers , MOS capacitors
O'Connor, É., Cherkaoui, K., Monaghan, S., Sheehan, B., Povey, I. M. and Hurley, P. K. (2017) 'Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration', Applied Physics Letters, 110, 032902 (5pp). doi:10.1063/1.4973971