Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration

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dc.contributor.authorO'Connor, Éamon
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorSheehan, Brendan
dc.contributor.authorPovey, Ian M.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2017-05-25T08:36:43Z
dc.date.available2017-05-25T08:36:43Z
dc.date.issued2017-01-19
dc.date.updated2017-05-25T08:12:08Z
dc.description.abstractIn0.53Ga0.47As metal-oxide-semiconductor (MOS) capacitors with an Al2O3 gate oxide and a range of n and p-type In0.53Ga0.47As epitaxial concentrations were examined. Multi-frequency capacitance-voltage and conductance-voltage characterization exhibited minority carrier responses consistent with surface inversion. The measured minimum capacitance at high frequency (1 MHz) was in excellent agreement with the theoretical minimum capacitance calculated assuming an inverted surface. Minority carrier generation lifetimes, sg, extracted from experimentally measured transition frequencies, xm, using physics based a.c. simulations, demonstrated a reduction in sg with increasing epitaxial doping concentration. The frequency scaled conductance, G/x, in strong inversion allowed the estimation of accurate Cox values for these MOS devices.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid032902
dc.identifier.citationO'Connor, É., Cherkaoui, K., Monaghan, S., Sheehan, B., Povey, I. M. and Hurley, P. K. (2017) 'Inversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentration', Applied Physics Letters, 110, 032902 (5pp). doi:10.1063/1.4973971en
dc.identifier.doi10.1063/1.4973971
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/4021
dc.identifier.volume110en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectScience Foundation Ireland (“INVENT” Project No. 09/IN.1/I2633)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/628523/EU/Fast Anneal of Compound semiconductors for Integration of new Technologies/FACITen
dc.rights© 2017, the Authors. Reproduced with the permission of AIP Publishing from Applied Physics Letters, 110, 032902 (5pp). doi:10.1063/1.4973971en
dc.rights.urihttps://publishing.aip.org/authors/copyright-reuseen
dc.subjectAluminaen
dc.subjectCapacitanceen
dc.subjectCarrier lifetimeen
dc.subjectDoping profilesen
dc.subjectElectric admittanceen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMinority carriersen
dc.subjectMOS capacitorsen
dc.titleInversion in the In0.53Ga0.47As metal-oxide-semiconductor system: Impact of the In0.53Ga0.47As doping concentrationen
dc.typeArticle (peer-reviewed)en
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