Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors
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Date
2011
Authors
Negara, Muhammad A.
Veksler, D.
Huang, J.
Ghibaudo, G.
Hurley, Paul K.
Bersuker, G.
Goel, N.
Kirsch, P.
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Volume Title
Publisher
AIP Publishing
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Abstract
We report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033)
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Keywords
MOSFETS , Carrier mobility , III-V semiconductors , Hall mobility , Carrier density , Electron mobility
Citation
Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101. doi: 10.1063/1.3665033
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© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665033