Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors

Simple item page
dc.contributor.authorNegara, Muhammad A.
dc.contributor.authorVeksler, D.
dc.contributor.authorHuang, J.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorBersuker, G.
dc.contributor.authorGoel, N.
dc.contributor.authorKirsch, P.
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderFP7 People: Marie-Curie Actions
dc.date.accessioned2017-07-28T10:48:30Z
dc.date.available2017-07-28T10:48:30Z
dc.date.issued2011
dc.description.abstractWe report an In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistor with a peak Hall mobility of 8300 cm(2)/Vs at a carrier density of 2 x 10(12) cm(-2). Comparison of split capacitance-voltage (CV) and Hall Effect measurements for the extracted electron mobility have shown that the split-CV can lead to an overestimation of the channel carrier concentration and a corresponding underestimation of electron mobility. An analysis of the electron density dependence versus gate voltage allows quantifying the inaccuracy of the split-CV technique. Finally, the analysis supported by multi-channel conduction simulations indicates presence of carriers spill over into the top InP barrier layer at high gate voltages. (C) 2011 American Institute of Physics. (doi: 10.1063/1.3665033)en
dc.description.sponsorshipIrish Research Council for Science, Engineering and Technology ((IRCSET)-Marie Curie International Mobility Fellowship in Science, Engineering and Technology; Science Foundation Ireland (Grant No. 08/US/I1546.)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid232101
dc.identifier.citationNegara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101. doi: 10.1063/1.3665033en
dc.identifier.doi10.1063/1.3665033
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued23
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4309
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3665033
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Negara, M. A., Veksler, D., Huang, J., Ghibaudo, G., Hurley, P. K., Bersuker, G., Goel, N. and Kirsch, P. (2011) 'Analysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistors', Applied Physics Letters, 99(23), pp. 232101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3665033en
dc.subjectMOSFETSen
dc.subjectCarrier mobilityen
dc.subjectIII-V semiconductorsen
dc.subjectHall mobilityen
dc.subjectCarrier densityen
dc.subjectElectron mobilityen
dc.titleAnalysis of effective mobility and hall effect mobility in high-k based In0.75Ga0.25As metal-oxide-semiconductor high-electron-mobility transistorsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3284.pdf
Size:
634.39 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles