Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process

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dc.contributor.authorChaudhari, Atul
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorShaw, Matthew T.
dc.contributor.authorCummins, Cian
dc.contributor.authorBorah, Dipu
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMorris, Michael A.
dc.contributor.editorWallow, Thomas I.
dc.contributor.editorHohle, Christoph K.
dc.date.accessioned2016-05-24T08:54:27Z
dc.date.available2016-05-24T08:54:27Z
dc.date.issued2014-03-27
dc.date.updated2015-05-26T11:53:01Z
dc.description.abstractThe nanometer range structure produced by thin films of diblock copolymers makes them a great of interest as templates for the microelectronics industry. We investigated the effect of annealing solvents and/or mixture of the solvents in case of symmetric Poly (styrene-block-4vinylpyridine) (PS-b-P4VP) diblock copolymer to get the desired line patterns. In this paper, we used different molecular weights PS-b-P4VP to demonstrate the scalability of such high χ BCP system which requires precise fine-tuning of interfacial energies achieved by surface treatment and that improves the wetting property, ordering, and minimizes defect densities. Bare Silicon Substrates were also modified with polystyrene brush and ethylene glycol self-assembled monolayer in a simple quick reproducible way. Also, a novel and simple in situ hard mask technique was used to generate sub-7nm Iron oxide nanowires with a high aspect ratio on Silicon substrate, which can be used to develop silicon nanowires post pattern transfer.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChaudhari, A., Ghoshal, T., Shaw M. T., Cummins C., Borah, D. Holmes, J. D., Morris, M. A. "Formation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour process ", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 905110 (March 27, 2014); doi:10.1117/12.2046044; http://dx.doi.org/10.1117/12.2046044en
dc.identifier.doi10.1117/12.2046044
dc.identifier.endpage905110-10en
dc.identifier.isbn9780819499745
dc.identifier.journaltitleProceedings of SPIEen
dc.identifier.startpage905110-1en
dc.identifier.urihttps://hdl.handle.net/10468/2604
dc.identifier.volume9051en
dc.language.isoenen
dc.publisherSPIEen
dc.relation.ispartofSPIE Proceedings
dc.relation.urihttp://proceedings.spiedigitallibrary.org/conferenceproceedings.aspx
dc.rights© 2014 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectBlock copolymersen
dc.subjectSolvent annealingen
dc.subjectHigh χ polymersen
dc.subjectPolymer brushesen
dc.subjectMetal oxide inclusionen
dc.subjectAnnealingen
dc.subjectIronen
dc.subjectMicroelectronicsen
dc.subjectNanofibersen
dc.subjectNanotechnologyen
dc.subjectOxidesen
dc.subjectSelf-assembled monolayersen
dc.subjectSiliconen
dc.subjectThin filmsen
dc.titleFormation of sub-7 nm feature size PS-b-P4VP block copolymer structures by solvent vapour processen
dc.typeConference itemen
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