Effects of annealing temperature and ambient on Metal/PtSe2 contact alloy formation

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dc.contributor.authorMirabelli, Gioele
dc.contributor.authorWalsh, Lee A.
dc.contributor.authorGity, Farzan
dc.contributor.authorBhattacharjee, Shubhadeep
dc.contributor.authorCullen, Conor P.
dc.contributor.authorÓ Coileáin, Cormac
dc.contributor.authorMonaghan, Scott
dc.contributor.authorMcEvoy, Niall
dc.contributor.authorNagle, Roger
dc.contributor.authorHurley, Paul K.
dc.contributor.authorDuffy, Ray
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2019-12-03T11:08:48Z
dc.date.available2019-12-03T11:08:48Z
dc.date.issued2019-10-10
dc.description.abstractForming gas annealing is a common process step used to improve the performance of devices based on transition-metal dichalcogenides (TMDs). Here, the impact of forming gas anneal is investigated for PtSe2-based devices. A range of annealing temperatures (150, 250, and 350 °C) were used both in inert (0/100% H2/N2) and forming gas (5/95% H2/N2) environments to separate the contribution of temperature and ambient. The samples are electrically characterized by circular transfer length method structures, from which contact resistance and sheet resistance are analyzed. Ti and Ni are used as metal contacts. Ti does not react with PtSe2 at any given annealing step. In contrast to this, Ni reacts with PtSe2, resulting in a contact alloy formation. The results are supported by a combination of X-ray photoelectron spectroscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy, and cross-sectional transmission electron microscopy. The work sheds light on the impact of forming gas annealing on TMD–metal interfaces, and on the TMD film itself, which could be of great interest to improve the contact resistance of TMD-based devices.en
dc.description.sponsorshipIrish Research Council (EPSPG/2015/69); Higher Education Authority (HEA PRTLI5)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMirabelli, G., Walsh, L. A., Gity, F., Bhattacharjee, S., Cullen, C. P., Ó Coileáin, C., Monaghan, S., McEvoy, N., Nagle, R., Hurley, P. K. and Duffy, R. (2019) 'Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation', ACS Omega, 4(17), pp. 17487-17493. doi: 10.1021/acsomega.9b02291en
dc.identifier.doi10.1021/acsomega.9b02291en
dc.identifier.eissn2470-1343
dc.identifier.endpage17493en
dc.identifier.issued17en
dc.identifier.journaltitleACS Omegaen
dc.identifier.startpage17487en
dc.identifier.urihttps://hdl.handle.net/10468/9294
dc.identifier.volume4en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI US Ireland R&D Partnership/13/US/I2862/IE/Understanding the Nature of Interfaces in Two Dimensional Electronic Devises (UNITE)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-COFUND-FP/713567/EU/Cutting Edge Training - Cutting Edge Technology/EDGEen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.rights© 2019, American Chemical Society. This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes.en
dc.subjectAnnealing temperatureen
dc.subjectMetal/PtSe2en
dc.subjectContact alloy formationen
dc.titleEffects of annealing temperature and ambient on Metal/PtSe2 contact alloy formationen
dc.typeArticle (peer-reviewed)en
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