Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08

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dc.contributor.authorGalluccio, Emmanuele
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorDoherty, Jessica
dc.contributor.authorLin, Shih-Va
dc.contributor.authorLu, Fang-Liang
dc.contributor.authorLiu, Chee Wee
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorDuffy, Ray
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-07-02T11:55:01Z
dc.date.available2020-07-02T11:55:01Z
dc.date.issued2019-04
dc.date.updated2020-07-02T11:34:41Z
dc.description.abstractThe aim of this work is to provide a systematic and comparative study on the material characteristics and electrical contact performance for a germanium-tin (GeSn) alloy with a high percentage of Sn (8%). Thin metal films (10 nm) of Nickel (Ni), Titanium (Ti), or Platinum (Pt) were deposited on Ge 0.92 Sn 0.08 layers and subsequently annealed at different temperatures ranging from 300°C up to 500°C. Various experimental techniques were employed to characterize the metal morphology and the electrical contact behavior, with the intention of identifying the most promising metal candidate, in terms of low sheet resistance and low surface roughness, considering a low formation temperature. The investigations carried out show that for nano-electronic contact applications, nickel-stanogermanide (NiGeSn) turns out to be the most promising candidate among the three different metals analyzed. NiGeSn presents low sheet resistance combined with low formation temperatures, below 400°C; PtGeSn shows better thermal stability when compared to the other two options while, Ti was found to be unreactive below 500°C, resulting in incomplete TiGeSn formation.en
dc.description.sponsorshipScience Foundation Ireland (Grant Numbers MOST 107-2622-8-002-018 and MOST 107-3017-F-009-002)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGalluccio, E., Petkov, N., Mirabelli, G., Doherty, J., Lin, S.-V., Lu, F.-L., Liu, C. W., Holmes, J. D. and Duffy, R. (2019) 'Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08', 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, France, 1-3 April. doi: 10.1109/EUROSOI-ULIS45800.2019.9041907en
dc.identifier.doi10.1109/EUROSOI-ULIS45800.2019.9041907en
dc.identifier.eissn2472-9132
dc.identifier.isbn978-1-7281-1658-7
dc.identifier.isbn978-1-7281-1659-4
dc.identifier.issn2330-5738
dc.identifier.urihttps://hdl.handle.net/10468/10199
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://eurosoiulis2019.sciencesconf.org/
dc.rights© 2019, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAnnealingen
dc.subjectElectrical contactsen
dc.subjectGermanium alloysen
dc.subjectNickel alloysen
dc.subjectPlatinum alloysen
dc.subjectSurface roughnessen
dc.subjectThermal stabilityen
dc.subjectTin alloysen
dc.subjectTitanium alloysen
dc.subjectMetal morphologyen
dc.subjectNanoelectronic contacten
dc.subjectStanogermanideen
dc.subjectGermanium-tin alloyen
dc.subjectThin metal filmsen
dc.subjectLow surface roughnessen
dc.subjectTemperature 300.0 degC to 500 degCen
dc.subjectGe0.92Sn0.08en
dc.subjectPtGeSnen
dc.subjectTiGeSnen
dc.subjectNiGeSnen
dc.subjectGeSnen
dc.subjectSheet resistanceen
dc.titleNi, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08en
dc.typeConference itemen
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