Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates
Trindade, António José
Gocalińska, Agnieszka M.
Bower, Christopher A.
Corbett, Brian M.
InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.
Fabrication and characterization , Heterogeneous integration , Optical device , Infrared lasers , Photonic materials , Engineered photonic structures , Substrates , III-V semiconductor materials , Indium phosphide , Waveguide lasers , Indium gallium arsenide
Loi, R., Callaghan, J. O., Roycroft, B., Robert, C., Fecioru, A., Trindade, A. J., Gocalinska, A., Pelucchi, E., Bower, C. A. and Corbett, B. (2016) ' Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates', IEEE Photonics Journal, 8(6), pp. 1-10. doi:10.1109/JPHOT.2016.2627883
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