Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates

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dc.contributor.authorLoi, Ruggero
dc.contributor.authorO'Callaghan, James
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorRobert, Cedric
dc.contributor.authorFecioru, Alin
dc.contributor.authorTrindade, António José
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorBower, Christopher A.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2017-01-19T09:33:25Z
dc.date.available2017-01-19T09:33:25Z
dc.date.issued2016-11-11
dc.description.abstractInP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. 500 μm × 60 μm laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl3:H2O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti-Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.en
dc.description.sponsorshipScience Foundation Ireland (SFI under Irish Photonic Integration Centre Award 12/RC/2276); Irish Higher Education Authority (HEA Program for Research in Third Level Institutions (2007–2011) via the INSPIRE program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid1504810
dc.identifier.citationLoi, R., Callaghan, J. O., Roycroft, B., Robert, C., Fecioru, A., Trindade, A. J., Gocalinska, A., Pelucchi, E., Bower, C. A. and Corbett, B. (2016) ' Transfer printing of AlGaInAs/InP etched facet lasers to Si substrates', IEEE Photonics Journal, 8(6), pp. 1-10. doi:10.1109/JPHOT.2016.2627883en
dc.identifier.doi10.1109/JPHOT.2016.2627883
dc.identifier.endpage1504810-11en
dc.identifier.issn1943-0655
dc.identifier.issued6en
dc.identifier.journaltitleIEEE Photonics Journalen
dc.identifier.startpage1504810-1en
dc.identifier.urihttps://hdl.handle.net/10468/3477
dc.identifier.volume8en
dc.language.isoenen
dc.publisherIEEEen
dc.rights© 2016 IEEE. Translations and content mining are permitted for academic research only. Personal use is also permitted, but republication/redistribution requires IEEE permission. See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.en
dc.subjectFabrication and characterizationen
dc.subjectHeterogeneous integrationen
dc.subjectOptical deviceen
dc.subjectInfrared lasersen
dc.subjectPhotonic materialsen
dc.subjectEngineered photonic structuresen
dc.subjectSubstratesen
dc.subjectIII-V semiconductor materialsen
dc.subjectIndium phosphideen
dc.subjectWaveguide lasersen
dc.subjectIndium gallium arsenideen
dc.titleTransfer printing of AlGaInAs/InP etched facet lasers to Si substratesen
dc.typeArticle (peer-reviewed)en
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