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On the interpretation of MOS impedance data in both series and parallel circuit topologies
Hurley, Paul K.
We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.
MOS characterization , Parameter extraction , Oxide thickness , Doping , Minority carrier lifetime , Impedance spectroscopy , TCAD
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2021) 'On the interpretation of MOS impedance data in both series and parallel circuit topologies', Solid-State Electronics, 185, pp. 108098 (5 pp). doi: 10.1016/j.sse.2021.108098