Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material
dc.contributor.author | Wei, Guannan | en |
dc.contributor.author | Das, Rajasree | en |
dc.contributor.author | Lordan, Daniel | en |
dc.contributor.author | Sai, Ranajit | en |
dc.contributor.author | Hayes, Mike | en |
dc.contributor.author | Lorenc, Marek | en |
dc.contributor.author | Clarke, Barry | en |
dc.contributor.author | Hurley, David | en |
dc.contributor.author | McCloskey, Paul | en |
dc.contributor.funder | Enterprise Ireland | en |
dc.date.accessioned | 2024-03-21T12:14:40Z | |
dc.date.available | 2024-03-21T12:14:40Z | |
dc.date.issued | 2023-09-04 | en |
dc.description.abstract | This paper present an optimized CoZrTaB-based laminated thin films with a novel wet etch-able oxide dielectric material. Wet etching capability was studied on the stack material exhibiting a narrow and clean undercut. Good uniaxial anisotropy with low coercivity was achieved via in-situ magnetic alignment during magnetron sputtering. Permeability of 432 and Q-factor of 23.4 at 100 MHz were observed in high frequency permeameter measurement. Finally thermal annealing was carried out at various temperatures. Uniaxial anisotropy was maintained up to 300 °C, while an enhancement of permeability (by 25%) was observed. | en |
dc.description.sponsorship | Enterprise Ireland (Innovation Partnership Programme Contract No: EI-IP20200912) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Wei, G., Das, R., Lordan, D., Sai, R., Hayes, M., Lorenc, M., Clarke, B., Hurley, D. and McCloskey, P. (2023) 'Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material', 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), Sendai, Japan, 15-19 May, pp. 1-2. https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228354 | en |
dc.identifier.doi | https://doi.org/10.1109/INTERMAGShortPapers58606.2023.10228354 | en |
dc.identifier.endpage | 2 | en |
dc.identifier.isbn | 979-8-3503-3836-2 | en |
dc.identifier.isbn | 979-8-3503-3837-9 | en |
dc.identifier.startpage | 1 | en |
dc.identifier.uri | https://hdl.handle.net/10468/15688 | |
dc.language.iso | en | en |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en |
dc.relation.ispartof | 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), Sendai, Japan, 15-19 May | en |
dc.rights | © 2023, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en |
dc.subject | CMOS compatible | en |
dc.subject | High permeability | en |
dc.subject | High frequency soft magnetic material | en |
dc.subject | Inductor | en |
dc.title | Improved high permeability CoZrTaB laminated thin films with novel CMOS compatible dielectric material | en |
dc.type | Conference item | en |