Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C

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dc.contributor.authorAnsari, Lida
dc.contributor.authorMonaghan, Scott
dc.contributor.authorMcEvoy, Niall
dc.contributor.authorÓ Coileáin, Cormac
dc.contributor.authorCullen, Conor P.
dc.contributor.authorLin, Jun
dc.contributor.authorSiris, Rita
dc.contributor.authorStimpel-Lindner, Tanja
dc.contributor.authorBurke, Kevin F.
dc.contributor.authorMirabelli, Gioele
dc.contributor.authorDuffy, Ray
dc.contributor.authorCaruso, Enrico
dc.contributor.authorNagle, Roger E.
dc.contributor.authorDuesberg, Georg S.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorGity, Farzan
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderIrish Research Councilen
dc.date.accessioned2019-10-14T21:52:46Z
dc.date.available2019-10-14T21:52:46Z
dc.date.issued2019-09-09
dc.description.abstractIn this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2 films, and highlight the importance of including van der Waals interactions, Green’s function calibration, and screened Coulomb interactions in the determination of the thickness-dependent PtSe2 energy gap. Large-area PtSe2 films of varying thickness (2.5–6.5 nm) were formed at 400 °C by thermally assisted conversion of ultra-thin platinum films on Si/SiO2 substrates. The PtSe2 films exhibit p-type semiconducting behavior with hole mobility values up to 13 cm2/V·s. Metal-oxide-semiconductor field-effect transistors have been fabricated using the grown PtSe2 films and a gate field-controlled switching performance with an ION/IOFF ratio of >230 has been measured at room temperature for a 2.5–3 nm PtSe2 film, while the ratio drops to <2 for 5–6.5 nm-thick PtSe2 films, consistent with a semiconducting-to-semimetallic transition with increasing PtSe2 film thickness. These experimental observations indicate that the low-temperature growth of semimetallic or semiconducting PtSe2 could be integrated into the back-end-of-line of a silicon complementary metal-oxide-semiconductor process.en
dc.description.sponsorshipIrish Research Council (GOIPD/2016/643 and GOIPD/2018/653)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid33en
dc.identifier.citationAnsari, L., Monaghan, S., McEvoy, N., Ó Coileáin, C., Cullen, C. P., Lin, J., Siris, R., Stimpel-Lindner, T., Burke, K. F., Mirabelli, G., Duffy, R., Caruso, E., Nagle, R. E., Duesberg, G. S., Hurley, P. K. and Gity, F. (2019) 'Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C', npj 2D Materials and Applications, 3(1), 33 (8pp.). DOI: 10.1038/s41699-019-0116-4en
dc.identifier.doi10.1038/s41699-019-0116-4en
dc.identifier.eissn2397-7132
dc.identifier.endpage8en
dc.identifier.issued1en
dc.identifier.journaltitlenpj 2D Materials and Applicationsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8755
dc.identifier.volume3en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/15/SIRG/3329/IE/Synthesis and Characterisation of 2D-Material Heterostacks/en
dc.relation.urihttps://www.nature.com/articles/s41699-019-0116-4#Abs1
dc.rights© The Author(s) 2019. This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectElectronic devicesen
dc.subjectTwo-dimensional materialsen
dc.subjectQuantum confinmenten
dc.subjectConfinement-induced-semimetal-to-semiconductoren
dc.subjectEvolutionen
dc.subjectPtSe2en
dc.titleQuantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °Cen
dc.typeArticle (peer-reviewed)en
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