Advancements in GaN-based horizontal-cavity and surface-emitting superluminescent diodes for next-generation holographic displays

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dc.contributor.authorMuhammet, Gencen
dc.contributor.authorLi, Zhien
dc.contributor.authorMorales, Juan S. D.en
dc.contributor.authorHazarika, Abhinandanen
dc.contributor.authorHwang, How Yuanen
dc.contributor.authorAkşit, Kaanen
dc.contributor.authorO'Carroll, Gerryen
dc.contributor.authorRoycroft, Brendanen
dc.contributor.authorCorbett, Brian M.en
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2025-04-08T11:11:50Z
dc.date.available2025-04-08T11:11:50Z
dc.date.issued2025-03-19en
dc.description.abstractSurface-emitting superluminescent diodes (SLDs) with horizontal cavities in the visible spectrum offer a significant advancement in optoelectronics, combining the benefits of LEDs and laser diodes. Characterized by broad emission spectrum, directionality, and high output power, SLDs are ideal for applications requiring high-brightness, high spatial coherence, and low temporal coherence, such as imaging and projection systems due to their speckle-free emission. This study focuses on SLDs emitting in the blue spectral region using gallium nitride (GaN) materials. Advanced fabrication techniques yielded a surface-emitting architecture using horizontal ridge waveguiding with a 45° total internal reflector on the facets, achieving high power and broad spectral output. The SLDs demonstrated a peak emission wavelength in the 4xx nm range with FWHM of 2-8 nm, depending on cavity length, and peak optical output power up to 1 W under pulse conditions. These features make SLDs cost-effective and suitable for next-gen optical systems, including holographic display applications, highlighting their potential for widespread adoption in high-performance technologies.en
dc.description.sponsorshipEnterprise Ireland (Contract No. CF 2023 2115P)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGenc, M., Li, Z., Morales, J., Hazarika, A., Hwang, H.Y., Aksit, K., O’Carroll, G., Roycroft, B. and Corbett, B. (2025) 'Advancements in GaN-based horizontal-cavity and surface-emitting superluminescent diodes for next-generation holographic displays', Proceedings of SPIE, 13366, Gallium Nitride Materials and Devices XX. San Francisco, United States, 25-31 January 2025. https://doi.org/10.1117/12.3044125en
dc.identifier.doihttps://doi.org/10.1117/12.3044125en
dc.identifier.urihttps://hdl.handle.net/10468/17249
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineers (SPIE)en
dc.relation.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/13366.tocen
dc.rights© 2025, Society of Photo-Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectSurface emissionen
dc.subjectSuperluminescenceen
dc.subjectSpeckle-free lighten
dc.subjectCost effectiveen
dc.subjectHigh poweren
dc.subjectHolographyen
dc.subjectAR/VRen
dc.titleAdvancements in GaN-based horizontal-cavity and surface-emitting superluminescent diodes for next-generation holographic displaysen
dc.typeConference itemen
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