Molecular layer doping: non-destructive doping of silicon and germanium

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dc.contributor.authorLong, Brenda
dc.contributor.authorVerni, Giuseppe A.
dc.contributor.authorO'Connell, John
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorShayesteh, Maryam
dc.contributor.authorO'Connell, Dan
dc.contributor.authorDuffy, Ray
dc.date.accessioned2016-02-29T12:34:46Z
dc.date.available2016-02-29T12:34:46Z
dc.date.issued2014-06
dc.date.updated2015-11-09T15:11:52Z
dc.description.abstractThis work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and chemically bound in self-limiting monolayers to the semiconductor surface. Subsequent annealing enabled diffusion of the dopant atom into the substrate. Material characterization included assessment of surface analysis (AFM) and impurity and carrier concentrations (ECV). Record carrier concentration levels of arsenic (As) in Si (~5Ã 10^20 atoms/cm3) by diffusion doping have been achieved, and to the best of our knowledge this work is the first demonstration of doping Ge by MLD. Furthermore due to the ever increasing surface to bulk ratio of future devices (FinFets, MugFETs, nanowire-FETS) surface packing spacing requirements of MLD dopant molecules is becoming more relaxed. It is estimated that a molecular spacing of 2 nm and 3 nm is required to achieve doping concentration of 10^20 atoms/cm3 in a 5 nm wide fin and 5 nm diameter nanowire respectively. From a molecular perspective this is readily achievable.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLONG, B., VERNI, G. A., O'CONNELL, J., HOLMES, J. D., SHAYESTEH, M., O'CONNELL, D. & DUFFY, R. (2014) Molecular Layer Doping: Non-destructive doping of silicon and germanium. 2014 20th International Conference on Ion Implantation Technology (IIT). Portland, Oregon, 26 June - 4 July. IEEE, pp. 1-4 http://dx.doi.org/10.1109/IIT.2014.6939995en
dc.identifier.doi10.1109/IIT.2014.6939995
dc.identifier.endpage4en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/2412
dc.language.isoenen
dc.publisherIEEEen
dc.relation.ispartofIon Implantation Technology (IIT), 2014 20th International Conference
dc.relation.urihttp://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6927586
dc.rights© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectChemistryen
dc.subjectDopingen
dc.subjectMolecular layer dopingen
dc.subjectSiliconen
dc.subjectSurface functionalisationen
dc.titleMolecular layer doping: non-destructive doping of silicon and germaniumen
dc.typeConference itemen
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