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Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
Hurley, Paul K.
Wallace, Robert M.
Young, Chadwin D.
High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of ~ 69 mV/dec and a ~ 10 × increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias.
MoS2 , Top-gated transistor , HfO2 , Al2O3 , High-k , Substrate
Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics', Microelectronic Engineering, 178, pp. 190-193. doi:10.1016/j.mee.2017.04.045