Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
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Accepted version
Date
2017-05-05
Authors
Bolshakov, Pavel
Zhao, Peng
Azcatl, Angelica
Hurley, Paul K.
Wallace, Robert M.
Young, Chadwin D.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Published Version
Abstract
High quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of ~ 69 mV/dec and a ~ 10 × increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias.
Description
Keywords
MoS2 , Top-gated transistor , HfO2 , Al2O3 , High-k , Substrate
Citation
Bolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics', Microelectronic Engineering, 178, pp. 190-193. doi:10.1016/j.mee.2017.04.045