Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics

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dc.check.date2019-05-05
dc.check.infoAccess to this article is restricted until 24 months after publication at the request of the publisher.en
dc.contributor.authorBolshakov, Pavel
dc.contributor.authorZhao, Peng
dc.contributor.authorAzcatl, Angelica
dc.contributor.authorHurley, Paul K.
dc.contributor.authorWallace, Robert M.
dc.contributor.authorYoung, Chadwin D.
dc.contributor.funderNational Science Foundationen
dc.contributor.funderMicroelectronics Advanced Research Corporationen
dc.contributor.funderDefense Advanced Research Projects Agencyen
dc.contributor.funderSemiconductor Research Corporationen
dc.date.accessioned2017-06-08T10:57:17Z
dc.date.available2017-06-08T10:57:17Z
dc.date.issued2017-05-05
dc.date.updated2017-06-08T10:45:00Z
dc.description.abstractHigh quality HfO2 and Al2O3 substrates are fabricated in order to study their impact on top-gate MoS2 transistors. Compared with top-gate MoS2 FETs on a SiO2 substrate, the field effect mobility decreased for devices on HfO2 substrates but substantially increased for devices on Al2O3 substrates, possibly due to substrate surface roughness. A forming gas anneal is found to enhance device performance due to a reduction in charge trap density of the high-k substrates. The major improvements in device performance are ascribed to the forming gas anneal. Top-gate devices built upon Al2O3 substrates exhibit a near-ideal subthreshold swing (SS) of ~ 69 mV/dec and a ~ 10 × increase in field effect mobility, indicating a positive influence on top-gate device performance even without any backside bias.en
dc.description.sponsorshipNational Science Foundation, United States (US/Ireland R&D Partnership, UNITE, NSF award ECCS-1407765); Microelectronics Advanced Research Corporation, Defense Advanced Research Projects Agency, Semiconductor Research Corporation, United States (Center for Low Energy Systems Technology (LEAST))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics', Microelectronic Engineering, 178, pp. 190-193. doi:10.1016/j.mee.2017.04.045en
dc.identifier.doi10.1016/j.mee.2017.04.045
dc.identifier.endpage193en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage190en
dc.identifier.urihttps://hdl.handle.net/10468/4062
dc.identifier.volume178en
dc.language.isoenen
dc.publisherElsevieren
dc.rights© 2017 Elsevier B.V. This manuscript version is made available under the CC-BY-NC-ND 4.0 licenseen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectMoS2en
dc.subjectTop-gated transistoren
dc.subjectHfO2en
dc.subjectAl2O3en
dc.subjectHigh-ken
dc.subjectSubstrateen
dc.titleElectrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectricsen
dc.typeArticle (peer-reviewed)en
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