Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding

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dc.contributor.authorTorchia, Pasqualino
dc.contributor.authorPampili, Pietro
dc.contributor.authorO'Connell, John
dc.contributor.authorO'Brien, Joe
dc.contributor.authorWhite, Mary
dc.contributor.authorSchmidt, Michael
dc.contributor.authorSheehan, Brendan
dc.contributor.authorWaldron, Finbarr
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorDuffy, Ray
dc.contributor.authorTrajkovic, T.
dc.contributor.authorKilchytska, V.
dc.contributor.authorGammon, P. M.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.authorGity, Farzan
dc.contributor.funderHorizon 2020en
dc.date.accessioned2018-11-14T12:35:20Z
dc.date.available2018-11-14T12:35:20Z
dc.date.issued2017
dc.date.updated2018-11-08T11:59:57Z
dc.description.abstractIn this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.en
dc.description.statusPeer revieweden
dc.description.urihttp://eurosoi-ulis2017.inn.demokritos.gr/en
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTorchia, P., Pampili, P., O'Connell, J., O'Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K. and Gity, F.(2017) 'Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding', 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS), Athens, Greece, 3-5 April.en
dc.identifier.urihttps://hdl.handle.net/10468/7113
dc.language.isoenen
dc.relation.ispartof2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS)
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/687361/EU/Si on SiC for the Harsh Environment of Space/SaSHaen
dc.rights© 2017, the Authors. All rights reserved.en
dc.subjectDirect wafer bondingen
dc.subjectFree radical surface activationen
dc.subjectHeterogenious integrationen
dc.subjectSien
dc.subjectSiCen
dc.titleInfluence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bondingen
dc.typeConference itemen
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