Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding
Holmes, Justin D.
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.
Direct wafer bonding , Free radical surface activation , Heterogenious integration , Si , SiC
Torchia, P., Pampili, P., O'Connell, J., O'Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K. and Gity, F.(2017) 'Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding', 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS), Athens, Greece, 3-5 April.
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