Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding
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Date
2017
Authors
Torchia, Pasqualino
Pampili, Pietro
O'Connell, John
O'Brien, Joe
White, Mary
Schmidt, Michael
Sheehan, Brendan
Waldron, Finbarr
Holmes, Justin D.
Monaghan, Scott
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Abstract
In this study, a surface activated bonding method using remote plasma is applied to realize the direct wafer bonding of Si and SiC. A comparison of different surface treatments is reported. Hydrophilic and hydrophobic wafers have been exposed to in-situ argon and nitrogen radicals generated by remote plasma for surface activation before bonding. A comparison of the bonding yield and surface condition has been conducted and analyzed as a function of the surface treatments. It has been shown that N2 plasma leads to the highest yield of > 97 %, strongest bond of > 360 N and interfacial layer (IL) thickness of ~1.5 nm.
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Keywords
Direct wafer bonding , Free radical surface activation , Heterogenious integration , Si , SiC
Citation
Torchia, P., Pampili, P., O'Connell, J., O'Brien, J., White, M., Schmidt, M., Sheehan, B., Waldron, F., Holmes, J. D., Monaghan, S., Duffy, R., Trajkovic, T., Kilchytska, V., Gammon, P., Cherkaoui, K., Hurley, P. K. and Gity, F.(2017) 'Influence of free radical surface activation on Si/SiC heterogeneous integration by direct wafer bonding', 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS), Athens, Greece, 3-5 April.
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© 2017, the Authors. All rights reserved.