Methodology and test structures for studying β-Ga2O3 dielectric and contact interfaces
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Date
2025-07-09
Authors
Gruszecki, Adam A.
Roy, Joy
Agrawal, Khushabu S.
La Torraca, Paolo
Cherkaoui, Karim
Hurley, Paul K.
Wallace, R. M.
Young, Chadwin D.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
An outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.
Description
Keywords
Surface cleaning , Plasma properties , Fabrication , Semiconductor device measurement , Semiconductor materials , Metallization , Logic gates , Dielectrics , Ohmic contacts , Microelectronics
Citation
Gruszecki, A. A., Roy, J., Agrawal, K. S., La Torraca, P., Cherkaoui, K., Hurley, P. K., Wallace, R. M. and Young, C. D. (2025) 'Methodology and test structures for studying β-Ga 2O3 dielectric and contact interfaces', 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), San Antonio, TX, USA, 24-27 March, pp. 1-6. https://doi.org/10.1109/ICMTS63811.2025.11068900
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