Methodology and test structures for studying β-Ga2O3 dielectric and contact interfaces

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dc.contributor.authorGruszecki, Adam A.en
dc.contributor.authorRoy, Joyen
dc.contributor.authorAgrawal, Khushabu S.en
dc.contributor.authorLa Torraca, Paoloen
dc.contributor.authorCherkaoui, Karimen
dc.contributor.authorHurley, Paul K.en
dc.contributor.authorWallace, R. M.en
dc.contributor.authorYoung, Chadwin D.en
dc.contributor.funderNational Science Foundationen
dc.contributor.funderResearch Irelanden
dc.date.accessioned2025-08-18T11:22:53Z
dc.date.available2025-08-18T11:22:53Z
dc.date.issued2025-07-09en
dc.description.abstractAn outline of versatile device structures and test methodologies is provided to streamline the fabrication and characterization of β-Ga2O3 and other novel semiconductor materials for the purpose of investigating gate oxide and metal contact interfaces. β-Ga2O3/Al2O3 metal-oxide-semiconductor capacitors (MOSCAPs) and β-Ga2O3/Ti/Au transfer length method (TLM) structures are fabricated for preliminary investigation of dielectric trapping and contact properties as a function of processing. Multifrequency C-V measurements of MOSCAPs show negligible differences in charge trapping at or near the oxide interface following ultraviolet-ozone (UV-O3) surface pretreatment. Additionally, I-V TLM characterization demonstrates improvements in ohmic contact properties after an O2 plasma surface cleaning prior to metallization.en
dc.description.sponsorshipNational Science Foundation (Grant ECCS 2154535) Research Ireland (Grant 12/US/3755)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGruszecki, A. A., Roy, J., Agrawal, K. S., La Torraca, P., Cherkaoui, K., Hurley, P. K., Wallace, R. M. and Young, C. D. (2025) 'Methodology and test structures for studying β-Ga 2O3 dielectric and contact interfaces', 2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), San Antonio, TX, USA, 24-27 March, pp. 1-6. https://doi.org/10.1109/ICMTS63811.2025.11068900en
dc.identifier.doi10.1109/icmts63811.2025.11068900en
dc.identifier.endpage6en
dc.identifier.isbn979-8-3315-3169-0en
dc.identifier.isbn979-8-3315-3170-6en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/17786
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2025 IEEE 37th International Conference on Microelectronic Test Structures (ICMTS), San Antonio, TX, USA, 24-27 March 2025en
dc.relation.project12/US/3755en
dc.rights© 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectSurface cleaningen
dc.subjectPlasma propertiesen
dc.subjectFabricationen
dc.subjectSemiconductor device measurementen
dc.subjectSemiconductor materialsen
dc.subjectMetallizationen
dc.subjectLogic gatesen
dc.subjectDielectricsen
dc.subjectOhmic contactsen
dc.subjectMicroelectronicsen
dc.titleMethodology and test structures for studying β-Ga2O3 dielectric and contact interfacesen
dc.typeConference itemen
dc.typeproceedings-articleen
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