Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters
Institute of Electrical and Electronics Engineers (IEEE)
We present a theoretical study on the impact of alloy disorder on carrier transport and recombination rates in an (Al,Ga)N single quantum well based LED operating in the deep UV spectral range. Our calculations indicate that alloy fluctuations enable ‘percolative pathways’ which can result in improved carrier injection into the well, but may also increase carrier leakage from the well. Additionally, we find that alloy disorder induces carrier localization effects, a feature particularly noticeable for the holes. These localization effects can lead to locally increased carrier densities when compared to a virtual crystal approximation which neglects alloy disorder. We observe that both radiative and non-radiative recombination rates are increased. Our calculations also indicate that Auger-Meitner recombination increases faster than the radiative rate, based on a comparison with a virtual crystal approximation.
Location awareness , Solid modeling , Three-dimensional displays , Metals , Charge carrier density , Radiative recombination , Crystals
Finn, R., O’Donovan, M., Farrell, P., Streckenbach, T., Moatti, J., Koprucki, T. and Schulz, S. (2023) 'Theoretical investigation of carrier transport and recombination processes for deep UV (Al,Ga)N light emitters', 2023 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Turin, Italy, 18-21 September, pp. 83-84. doi: 10.1109/NUSOD59562.2023.10273485
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